silicon epitaxial planar transistor S8050 features z high collector current.(i c = 500ma). z complementary to s8550. z excellent h fe linearity. z high total power dissipation.(p c =300mw) applications z high collector current. sot-23 ordering information type no. marking package code S8050 j3y sot-23 maximum rating @ ta=25 unless otherwise specified symbol parameter value units v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 500 ma p c collector dissipation 300 mw t j, t stg junction and storage temperature -55~150 pb lead-free diode semiconductor korea www.diode.kr
silicon epitaxial planar transistor S8050 electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a,i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c =0.1ma,i b =0 25 v emitter-base breakdown voltage v (br)ebo i e =100 a,i c =0 5 v collector cut-off current i cbo v cb =40v,i e =0 0.1 a collector cut-off current i ceo v ce =20v,i b =0 0.1 a emitter cut-off current i ebo v eb =5v,i c =0 0.1 a dc current gain h fe v ce =1v,i c =50ma v ce =1v,i c =500ma 120 50 350 collector-emitter saturation voltage v ce(sat) i c =500ma, i b = 50ma 0.6 v base-emitter saturation voltage v be(sat) i c =500ma, i b = 50ma 1.2 v transition frequency f t v ce =6v, i c = 20ma f=30mhz 150 mhz classification of h fe(1) rank l h range 120-200 200-350 www.diode.kr diode semiconductor korea
silicon epitaxial planar transistor S8050 typical characteristics @ ta=25 unless otherwise specified www.diode.kr diode semiconductor korea
silicon epitaxial planar transistor S8050 package outline plastic surface mounted package sot-23 soldering footprint unit : mm package information sot-23 dim min max a 2.85 2.95 b 1.25 1.35 c 1.0typical d 0.37 0.43 e 0.35 0.48 g 1.85 1.95 h 0.02 0.1 j 0.1typical k 2.35 2.45 all dimensions in mm device package shipping S8050 sot-23 3000/tape&reel www.diode.kr diode semiconductor korea
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